A P-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are holes moving through the channels.
SMD/SMT SOT-23-3 N-Channel MOSFET. Products (631) Datasheets (447) Images (33) Newest Products -Results: 631. Smart Filtering As you select one or more parametric filters below, Smart Filtering will instantly disable any unselected values that would cause no results to be found. Technical Support Centers: United States and the Americas: Voice Mail: 1 800 282 9855: Phone: 011 421 33 790 2910: Hours: M-F, 9:00AM - 5:00PM MST (GMT -07:00). SMD/SMT P-Channel MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for SMD/SMT P-Channel MOSFET.
This is in contrast to the other type of MOSFET, which are N-Channel MOSFETs, in which the majority ofcurrent carriers are electrons.
Before, we go over the construction of P-Channel MOSFETs, we must go over the 2 types that exist. There are 2 types of P-Channel MOSFETs, enhancement-type MOSFETs and depletion-type MOSFETs.
A depletion-type MOSFET is normally on (maximum current flows from source to drain) when no differencein voltage exists between the gate and source terminals. However, if a voltage is applied to its gate lead, the drain-source channel becomes more resistive, until the gate voltage is so high, the transistor completely shuts off. An enhancement-type MOSFET is the opposite. It is normally off when the gate-source voltage is 0V(VGS=0). However, if a voltage is applied to its gate lead, the drain-source channel becomesless resistive.
In this article, we will go over how both P-Channel enhancement-type and depletion-type MOSFETs are constructed and operate.
How P-Channel MOSFETs Are Constructed Internally
An P-Channel MOSFET is made up of a P channel, which is a channel composed of a majority of hole current carriers. The gate terminals are made up of N-type material.
Depending on the voltage quantity and type (negative or positive)determines how the transistor operates and whether it turns on or off.
How a P-Channel Enhancement-type MOSFET Works
How to Turn on a P-Channel Enhancement Type MOSFET
To turn on a P-Channel Enhancement-type MOSFET, apply a positive voltage VS to the source of the MOSFET and apply a negative voltage to the gate terminal of the MOSFET (the gate must be sufficiently more negative than the threshold voltage across the drain-source region(VG
So with a sufficient positive voltage, VS, to the source and load, and sufficient negative voltage applied to the gate, the P-Channel Enhancement-type MOSFET is fully functional and is in the active 'ON' mode of operation.
How to Turn Off a P-Channel Enhancement Type MOSFET
To turn off a P-channel enhancement type MOSFET, there are 2 steps you can take. You can either cut off the bias positive voltage, VS, that powers the source. Or you can turn off the negative voltagegoing to the gate of the transistor.
How a P-Channel Depletion-type MOSFET Works
How to Turn on a P-Channel Depletion Type MOSFET
To turn on a P-Channel Depletion-Type MOSFET, for maximum operation, the gate voltage feeding the gate terminal should be 0V. With the gate voltage being 0V, the drain current is at is largest value and the transistor is in the active 'ON'region of conduction.
So, again, to turn on a P channel depletion-type MOSFET, positive voltage is applied to the source of the p-channel MOSFET. So we power the source terminal of the MOSFET with VS, a positive voltage supply. With a sufficient positive voltage, VS, and no voltage (0V) applied to the base, the P-channel Depletion-type MOSFET is in maximum operation and has the largest current.
How to Turn Off a P-Channel Depletion Type MOSFET
To turn off a P-channel MOSFET, there are 2 steps you can take. You can either cut off the bias positivevoltage, VDD, that powers the drain. Or you can apply a negative voltage to the gate. When a negativevoltage is applied to the gate, the current is reduced. As the gate voltage, VG, becomes more negative, the current lessens until cutoff, which is when then MOSFET is in the 'OFF' condition. This stops a large source-drain current.
So ,again, as negative voltage is applied to the gate terminal of the P channel depletion-type MOSFET, the MOSFET conducts less and less current across the source-drain terminal. When the gate voltage reaches a certain negative voltage threshold, it shuts the transistor off. Negative voltage shuts the transistor off. This is for a depletion-type P-channel MOSFET.
MOSFET transistors are used for both switching and amplifying applications. MOSFETs are perhaps the most popular transistors used today. Their high input impedance makes them draw very little input current, they are easy to make, can be made very small, and consume very little power.
Related Resources
How to Build a P-Channel MOSFET Switch Circuit
N-Channel MOSFET Basics
N Channel JFET Basics
P Channel JFET Basics
Types of Transistors
N-Channel MOSFET Basics
N Channel JFET Basics
P Channel JFET Basics
Types of Transistors
Type Designator: 4407
Marking Code: 4407
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 3 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Crown reach truck. Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: SOP8
4407 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
4407 Datasheet (PDF)
0.1. ec4407kf.pdf Size:33K _sanyo
Ordering number : ENN8397 EC4407KFN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEC4407KFApplicationsFeatures Low ON-resistance. 1.8V drive. mounting height : 0.4mm.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID 1.3 A
0.2. 2sc4407.pdf Size:105K _sanyo
Ordering number:EN2760NPN Epitaxial Planar Silicon Transistor2SC4407VHF/UHF Mixer,Local Oscillator ApplicationsApplications Package Dimensions VHF/UHF mixers, frequency converters, localunit:mmoscillators.2059B[2SC4407]0.3Features0.15 High cutoff frequency : fT=3.0GHz typ3 High power gain : PG=12dB typ (f=0.9GHz)0~0.1 Small noise figure : NF=3.0dB
0.3. 2n4407 2n4406.pdf Size:81K _central
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
0.4. dmg4407sss.pdf Size:222K _diodes
DMG4407SSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 11m @ VGS = -20V -9.9A Lead Free By Design/RoHS Compliant (Note 1) 'Green' Device, Halogan and Antimony Free (Note 2) -30V 17m @ VGS = -6V -8.2A Qualified to AEC-
0.5. utt4407.pdf Size:140K _utc
UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTCs advanced trench technology to provide customers with a minimum on-state resistance and extremal lowgate charge with a 25V gate rating The UTC UTT4407 is universally applied in PWM or use
0.6. itc14407.pdf Size:98K _gec_plessey
JULY 1996ITC14407516DPRELIMINARY DATADS4580-1.4ITC14407516DPOWERLINE N-CHANNEL IGBT CHIPFEATURES TYPICAL KEY PARAMETERS (25C)VCES 1600V n - Channel.IC(CONT) 75A Enhancement Mode.VCE(sat) 3.3V High Input Impedance. High Switching Speed. Latch-Free Operation. Low Forward Voltage Drop. Short Circuit Capability (10s).RATINGSSymbol Parameter Test Conditions Ma
0.7. ssg4407p.pdf Size:542K _secos
SSG4407P -15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures Bminimal power loss and conserves energy, making this device ideal for use
High Side N Channel Mosfet
0.8. ao4407a.pdf Size:207K _aosemi
AO4407A30V P-Channel MOSFETGeneral Description Product SummaryThe AO4407A uses advanced trench technology to VDS = -30Vprovide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V)with a 25V gate rating. This device is suitable for use as RDS(ON)
0.9. ao4407.pdf Size:340K _aosemi
AO440730V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-20V) -12Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V)
0.10. ao4407c.pdf Size:332K _aosemi
AO4407C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)
0.11. aon4407.pdf Size:481K _aosemi
AON440712V P-Channel MOSFETGeneral Description FeaturesThe AON4407 uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and operationID = -9 A (VGS = -4.5V)with gate voltages as low as 1.8V. This device is suitableRDS(ON)
Halma. 0.12. ap4407gp ap4407gs.pdf Size:218K _ape
P Channel Mosfet Circuit
AP4407GS/PRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design,DS TO-263(
0.13. ap4407i.pdf Size:211K _ape
AP4407I-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP4407 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
0.14. ap4407s-p.pdf Size:71K _ape
AP4407S/PAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDLower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-26
0.15. ap4407i-hf.pdf Size:94K _ape
AP4407I-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz
0.16. ap4407gm-hf.pdf Size:208K _ape
AP4407GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 14mD Fast Switching ID -10.7AG RoHS Compliant SSSO-8SDDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized d
0.17. ap4407gp-hf ap4407gs-hf.pdf Size:98K _ape
AP4407GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, rugge
0.18. ap4407gm.pdf Size:170K _ape
AP4407GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS -30V Simple Drive Requirement DD D RDS(ON) 14m Low On-resistance D ID -10.7A Fast Switching G RoHS Compliant & Halogen-Free SSSO-8SDDescriptionAP4407 series are from Advanced Pow
0.19. am4407p.pdf Size:210K _analog_power
Analog Power AM4407PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 9 @ VGS = -10V -15-30circuitry. Typical applications are PWMDC-DC 13 @ VGS = -4.5V -11converter
0.20. am4407pe.pdf Size:117K _analog_power
Analog Power AM4407PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = -10V -15-30converters and power management in portable and 13 @ VGS = -4.5V -11ba
0.21. 4407.pdf Size:1843K _shenzhen
Shenzhen Tuofeng Semiconductor Technology co., LTD 4407P-Channel Enhancement-Mode MOSFET (-30V, -12A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 13 @ VGS = -20V ,ID=-10A 20 @ VGS = -10V ,ID=-10A -30V -12A 28 @ VGS = -5V ,ID=-10A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Lead free product is acquired
0.22. ftk4407.pdf Size:372K _first_silicon
SEMICONDUCTOR FTK4407TECHNICAL DATAP-Channel Power MOSFETDESCRIPTION SOP-8 The FTK4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).The device is ideal for load switch and battery protection applications D D D D8 7 6 5APPLICATIONS Battery protection applications1 2 3 4S S S G Load switch MARKING Q440
0.23. ko4407.pdf Size:2294K _kexin
SMD Type MOSFETP-Channel MOSFETKO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V)1.50 0.15 RDS(ON) 13m (VGS =-20V)D RDS(ON) 14m (VGS =-10V) D1 Source 5 Drain RDS(ON) 30m (VGS =-5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai
0.24. ao4407a.pdf Size:1643K _kexin
SMD Type MOSFETP-Channel MOSFETAO4407A (KO4407A)SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V)1.50 0.15 RDS(ON) 11m (VGS =-20V) RDS(ON) 13m (VGS =-10V)1 Source 5 Drain RDS(ON) 17m (VGS =-6V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr
0.25. ao4407.pdf Size:2315K _kexin
SMD Type MOSFETP-Channel MOSFETAO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V)1.50 0.15 RDS(ON) 13m (VGS =-20V)D RDS(ON) 14m (VGS =-10V) D1 Source 5 Drain RDS(ON) 30m (VGS =-5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai
0.26. am4407.pdf Size:475K _ait_semi
AiT Semiconductor Inc. AM4407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4407 is the P-Channel logic enhancement 30V/-12.0A, R = 12m(typ)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-7.5A, R = 19m(typ)@V =-4.5V DS(ON) GShigh cell density. Advanced trench technology to Super high density cell des
0.27. elm14407aa.pdf Size:409K _elm
Single P-channel MOSFETELM14407AA-NGeneral description Features ELM14407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A (Vgs=-20V)resistance. Rds(on)
0.28. elm34407aa.pdf Size:625K _elm
Single P-channel MOSFETELM34407AA-NGeneral description Features ELM34407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
0.29. mmp4407.pdf Size:164K _m-mos
MMP4407Data SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-10A = 20mRDS(ON), [email protected], Ids@-7A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and
0.30. ssm4407gm.pdf Size:526K _silicon_standard
SSM4407GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM4407GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 14mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -10.7AD The SSM4407GM is supplied in a RoHS-compliantPb-free; RoHS
0.31. stp4407.pdf Size:537K _stansontech
STP4407STP4407STP4407STP4407P Channel Enhancement Mode MOSFET- 12ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STP4407 is the P-Channel logic enhancement mode power field effect transistoris produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited f
0.32. stp4407a.pdf Size:821K _stansontech
STP4407A P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an
0.33. br4407.pdf Size:1297K _allpower
AIIP ERDATA SHEET BR4407 P-Channel p werMOSFETl DescriptinsSOP-8 P MOS P-Channel Enhancement Mode Field Effect Transist r in a SOP-8 Plastic Package.l Features Vos (V) = -30V = A l -12 (VGs = -20V) omRos(ON)
Datasheet: 1481, 2015, 2016, 2021, 2026, 2341, 4401, 4402, STF5N52U, 4409, 4410, 4435, 4501, 4542, 4606, 4611, 4612.
LIST
Last Update
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02